Heterojunction bipolar transistor

ABSTRACT

A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer. An electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims benefit of priority to Japanese PatentApplication No. 2017-199029, filed Oct. 13, 2017, the entire content ofwhich is incorporated herein by reference.

BACKGROUND Technical Field

The present disclosure relates to a heterojunction bipolar transistor.

Background Art

In mobile terminals, heterojunction bipolar transistors (HBTs) aremainly used as transistors included in power amplifier modules. Examplesof characteristics required for HBTs include high efficiency, high gain,high output, high breakdown voltage, and low distortion in theradio-frequency range. In particular, recently, low distortion and highperformance (high efficiency and high gain) have been desired for HBTsthat are operated at high output.

Japanese Unexamined Patent Application Publication No. 2000-332023discloses an HBT aiming the achievement of high efficiency. The HBTincludes an emitter layer, a base layer, a collector layer, and asub-collector layer in this order. The collector layer includes aplurality of adjacent sub-regions. In each of the sub-regions, theenergy band gap is constant or changes linearly. The energy band edge inwhich carriers in the collector transit is continuous between theadjacent sub-regions. A two-dimensional or quasi-two-dimensional chargelayer is formed at the interfaces between the sub-regions so as tocompensate for a quasi-electric field resulting from the difference inelectron affinity and energy band gap between the sub-regions.

One of the sub-regions of the collector layer is formed of a gradedsemiconductor in which the electron affinity gradually increases fromthe base layer toward the sub-collector layer. A sub-region formed of aninversely graded semiconductor in which the electron affinity graduallydecreases from the base layer toward the sub-collector layer (inverselygraded semiconductor layer) is disposed between the sub-region (gradedsemiconductor layer) and the base layer. A two-dimensional charge layer(delta-doped layer) is disposed at an interface between the gradedsemiconductor layer and the inversely graded semiconductor layer.Herein, the term “graded semiconductor layer” refers to a semiconductorlayer in which a mixed-crystal ratio of constituent elements of an alloysemiconductor (mixed-crystal semiconductor) changes such that theelectron affinity gradually increases from the base layer toward thesub-collector layer. The term “inversely graded semiconductor layer”refers to a semiconductor layer in which a mixed-crystal ratio ofconstituent elements of an alloy semiconductor changes such that theelectron affinity gradually decreases from the base layer toward thesub-collector layer.

This HBT includes a heterojunction between the collector layer and thebase layer and is classified into a so-called double heterojunctionbipolar transistor (DHBT). In DHBTs, an improvement in the efficiency ofa power amplifier is expected by reducing the offset voltage.

In DHBTs, although an improvement in the efficiency can be expected byreducing the offset voltage, inhibition of electron transport calledblocking effect is caused by an energy barrier formed at an interfacebetween an inversely graded semiconductor layer and a gradedsemiconductor layer. The effect of improving the efficiency of DHBTs maynot be effectively achieved due to this blocking effect. In the DHBTdisclosed in Japanese Unexamined Patent Application Publication No.2000-332023, the energy barrier is lowered by disposing the delta-dopedlayer at the interface between the inversely graded semiconductor layerand the graded semiconductor layer to thereby improve the efficiency.

SUMMARY

According to examinations conducted by the inventors of the presentapplication, it was found that in the structure of the DHBT disclosed inJapanese Unexamined Patent Application Publication No. 2000-332023, thelinearity of input-output characteristics decreases (distortionincreases) at high output. The reason why the linearity of input-outputcharacteristics decreases at high output is as follows.

In the HBT disclosed in Japanese Unexamined Patent ApplicationPublication No. 2000-332023, the arrangement of the delta-doped layercauses the presence of a high-concentration region in the collectorlayer near the base layer. This high-concentration region may cause adecrease in the linearity of the voltage dependence of thebase-collector capacitance (Cbc-Vbc characteristics). The decrease inthe linearity of Cbc-Vbc characteristics results in degradation of anadjacent channel leakage ratio (ACLR), which is an index representingthe distortion of power amplifiers.

Accordingly, the present disclosure provides an HBT capable ofsuppressing a decrease in the linearity of input-output characteristicsthereof.

A heterojunction bipolar transistor according to a first aspect of thepresent disclosure includes a collector layer, a base layer, and anemitter layer that are stacked on a substrate. The collector layerincludes a graded semiconductor layer in which an electron affinityincreases from a side closer to the base layer toward a side fartherfrom the base layer. An electron affinity of the base layer at aninterface closer to the collector layer is equal to an electron affinityof the graded semiconductor layer at an interface closer to the baselayer.

An energy barrier to electrons is not formed at an interface between thebase layer and the collector layer. An energy barrier to electrons isnot formed in the graded semiconductor layer of the collector layer.This configuration enables a decrease in the cutoff frequency due to theblocking effect to be suppressed. Furthermore, a high-concentrationlayer such as a delta-doped layer need not be disposed in the collectorlayer on the side closer to the base layer. This configuration enables adecrease in the linearity of input-output characteristics to besuppressed.

A heterojunction bipolar transistor according to a second aspect of thepresent disclosure has the configuration of the heterojunction bipolartransistor according to the first aspect, wherein an electron affinityof the base layer increases from an interface closer to the emitterlayer toward the interface closer to the collector layer. Electrons aredrifted by an effective electric field generated in the base layer, andthus radio-frequency characteristics and the ACLR can be furtherimproved.

A heterojunction bipolar transistor according to a third aspect of thepresent disclosure has the configuration of the heterojunction bipolartransistor according to the second aspect, wherein the base layer ismade of AlGaAs, and an AlAs mixed-crystal ratio of the base layerdecreases from the interface closer to the emitter layer toward theinterface closer to the collector layer. When the AlAs mixed-crystalratio is changed in this manner, the electron affinity of the base layerincreases from the interface closer to the emitter layer toward theinterface closer to the collector layer.

A heterojunction bipolar transistor according to a fourth aspect of thepresent disclosure has the configuration of the heterojunction bipolartransistor according to any of the first to third aspects, wherein thecollector layer includes a first portion which is a portion closer tothe base layer and a second portion which is a remaining portion fartherfrom the base layer. Also, a doping concentration of the first portionis lower than a doping concentration of the second portion.

With an increase in the collector voltage, a depletion layer rapidlyextends from the base-collector interface toward the collector layer.When the depletion layer reaches an interface between the first portionand the second portion, the extension of the depletion layer issuppressed with respect to the increase in the collector voltage. Sincethe collector voltage dependence of the base-collector capacitance isdecreased in a collector voltage region in which the extension of thedepletion layer is suppressed, the linearity of input-outputcharacteristics can be enhanced.

A heterojunction bipolar transistor according to a fifth aspect of thepresent disclosure has the configuration of the heterojunction bipolartransistor according to the fourth aspect, wherein the first portion ismade of at least one semiconductor selected from the group consisting ofn-type semiconductors having a doping concentration of 3×10¹⁵ cm⁻³ orless, p-type semiconductors having a doping concentration of 1×10¹⁵ cm⁻³or less, and intrinsic semiconductors. With an increase in the collectorvoltage, the depletion layer extending from the base-collector interfacetoward the collector layer more rapidly reaches the interface betweenthe first portion and the second portion.

A heterojunction bipolar transistor according to a sixth aspect of thepresent disclosure has the configuration of the heterojunction bipolartransistor according to the fourth aspect or the fifth aspect, whereinthe second portion includes a third portion which is a portion closer tothe first portion and a fourth portion which is a remaining portionfarther from the first portion. Also, a doping concentration of thethird portion is lower than a doping concentration of the fourthportion.

When the first portion and the third portion each have a lowerconcentration than the fourth portion, the base-collector breakdownvoltage and the emitter-collector breakdown voltage can be enhanced.Thus, higher output of a power amplifier including a heterojunctionbipolar transistor can be realized.

A heterojunction bipolar transistor according to a seventh aspect of thepresent disclosure has the configuration of the heterojunction bipolartransistor according to the sixth aspect and further includes asub-collector layer made of an n-type semiconductor, disposed on thesubstrate, and functioning as a path through which a current flows intothe collector layer. The collector layer is disposed on thesub-collector layer, and each of the doping concentrations of the firstportion and the third portion is 1/10 or less of a doping concentrationof the sub-collector layer. A sufficient effect of enhancing thebase-collector breakdown voltage and the emitter-collector breakdownvoltage is obtained.

A heterojunction bipolar transistor according to an eighth aspect of thepresent disclosure has the configuration of the heterojunction bipolartransistor according to the seventh aspect, wherein the dopingconcentration of the fourth portion is 0.5 times or more and 1.5 timesor less (i.e., from 0.5 time to 1.5 times) the doping concentration ofthe sub-collector layer.

The collector resistance can be reduced. As a result, higher output andan improvement in the efficiency of a power amplifier including aheterojunction bipolar transistor can be realized.

An energy barrier to electrons is not formed at the interface betweenthe base layer and the collector layer. An energy barrier to electronsis not formed in the graded semiconductor layer of the collector layer.This configuration enables a decrease in the cutoff frequency due to theblocking effect to be suppressed. Furthermore, a high-concentrationlayer such as a delta-doped layer need not be disposed in the collectorlayer on the side closer to the base layer. This configuration enables adecrease in the linearity of input-output characteristics to besuppressed.

Other features, elements, characteristics and advantages of the presentdisclosure will become more apparent from the following detaileddescription of preferred embodiments of the present disclosure withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of an HBT according to a first embodiment;

FIG. 2 is a sectional view of an HBT according to a comparative examplehaving a structure similar to the HBT disclosed in Japanese UnexaminedPatent Application Publication No. 2000-332023;

FIG. 3A is a graph showing simulation results of the collector currentdependence of a cutoff frequency ft (ft-Ic characteristics);

FIG. 3B is a graph showing simulation results of energy of an electronat the lower edge of the conduction band of an HBT when an emittervoltage is 0 V, and a base voltage and a collector voltage are 1.3 V;

FIG. 4 is a sectional view of an HBT according to a second embodiment;

FIG. 5 is a graph showing a distribution of an AlAs mixed-crystal ratiox and a distribution of a doping concentration with respect to athickness direction of a collector layer of an HBT according to thesecond embodiment;

FIG. 6 is a sectional view of an HBT according to the second embodimentduring its production;

FIG. 7 is a sectional view of an HBT according to the second embodimentduring its production;

FIG. 8 is a sectional view of an HBT according to the second embodimentduring its production;

FIG. 9 is a graph showing a distribution of an AlAs mixed-crystal ratiox and a distribution of a doping concentration in a collector layer ofan HBT according to a modification of the second embodiment;

FIG. 10 is a sectional view of an HBT according to a third embodiment;

FIG. 11 is a sectional view of an HBT according to a fourth embodiment;

FIG. 12 is a graph showing a composition distribution and a dopingconcentration distribution of a collector layer of an HBT according tothe fourth embodiment;

FIG. 13 is a sectional view of an HBT according to a fifth embodiment;and

FIG. 14 is a graph showing a composition distribution and a dopingconcentration distribution of a collector layer of an HBT according tothe fifth embodiment.

DETAILED DESCRIPTION First Embodiment

An HBT according to a first embodiment will be described with referenceto FIGS. 1 to 3B.

FIG. 1 is a sectional view of an HBT according to the first embodiment.A sub-collector layer 21 made of n-type GaAs is disposed on a substrate20 made of semi-insulating GaAs. A collector layer 22 and a base layer23 are stacked on a partial region of the sub-collector layer 21.

The collector layer 22 includes two layers of a lower collector layer220 disposed on the side closer to the sub-collector layer 21 and anupper collector layer 221 disposed on the lower collector layer 220. Thelower collector layer 220 is made of n-type GaAs. The upper collectorlayer 221 is made of n-type Al_(x)Ga_(1-x)As. The upper collector layer221 is a graded semiconductor layer in which an AlAs mixed-crystal ratiox linearly changes from 0.1 at the interface closer to the base layer 23to 0 at the interface closer to the sub-collector layer 21. In thegraded semiconductor layer, the electron affinity gradually increasesfrom the side closer to the base layer 23 toward the side farther fromthe base layer 23.

The base layer 23 is made of p-type Al_(x)Ga_(1-x)As. The AlAsmixed-crystal ratio x of the base layer 23 is 0.1. The electron affinityof the base layer 23 is equal to the electron affinity of the uppercollector layer 221 at the interface on the base side. Note that evenwhen there is a difference of about 26 meV, which is energy of anelectron at room temperature, between the electron affinities, such arelationship between the electron affinities is substantially classifiedinto the category that “electron affinities are equal to each other”.

An emitter layer 24, an emitter cap layer 25, and an emitter contactlayer 26 are stacked on a partial region of the base layer 23. Theemitter layer 24 is made of n-type InGaP. The emitter cap layer 25 ismade of n-type GaAs. The emitter contact layer 26 is made of n-typeInGaAs.

A collector electrode 31 is disposed on the sub-collector layer 21. Abase electrode 32 is disposed on the base layer 23. An emitter electrode33 is disposed on the emitter contact layer 26. The collector electrode31 is in ohmic contact with the sub-collector layer 21. The baseelectrode 32 is in ohmic contact with the base layer 23. The emitterelectrode 33 is in ohmic contact with the emitter layer 24 with theemitter contact layer 26 and the emitter cap layer 25 therebetween. Thesub-collector layer 21 functions as a path through which a current flowsinto the collector layer 22.

FIG. 2 is a sectional view of an HBT according to a comparative examplehaving a structure similar to the HBT disclosed in Japanese UnexaminedPatent Application Publication No. 2000-332023. Hereinafter, thedifference from the HBT according to the first embodiment illustrated inFIG. 1 will be described.

In the comparative example, a base layer 23 is made of GaAs. In order toavoid discontinuity of the potential at the lower edge of the conductionband at the interface between the base layer 23 and a collector layer22, an inversely graded semiconductor layer 221 a is disposed between anupper collector layer 221 and the base layer 23. The inversely gradedsemiconductor layer 221 a is made of n-type Al_(x)Ga_(1-x)As. The AlAsmixed-crystal ratio x of the inversely graded semiconductor layer 221 alinearly changes from 0 at the interface closer to the base layer 23 to0.1 at the interface closer to a sub-collector layer 21. No delta-dopedlayer is disposed at the interface between the inversely gradedsemiconductor layer 221 a and the upper collector layer 221. The reasonwhy no delta-doped layer is disposed is to suppress a decrease in thelinearity of the voltage dependence of the base-collector capacitanceCbc.

The collector current dependence of a cutoff frequency ft of the HBTaccording to the first embodiment illustrated in FIG. 1 and the HBTaccording to the comparative example illustrated in FIG. 2 weredetermined by a simulation.

FIG. 3A is a graph showing the simulation results of the collectorcurrent dependence of the cutoff frequency ft (ft-Ic characteristics).The horizontal axis represents a collector current Ic in units of “mA”,and the vertical axis represents the cutoff frequency ft in units of“GHz”. The thick solid line and the thin solid line in FIG. 3A indicatethe cutoff frequency ft of the HBT of the first embodiment (FIG. 1) andthe HBT of the comparative example (FIG. 2), respectively. For example,the range of use of the collector current Ic is 80 mA or less.

In the case of the comparative example, in the typical range of use ofthe collector current Ic, the cutoff frequency ft increases with anincrease in the collector current Ic, exhibits a peak (maximum value),and then decreases. In the comparative example, as described above, nodelta-doped layer is disposed at the interface between the inverselygraded semiconductor layer 221 a and the upper collector layer 221 tothereby suppress a decrease in the linearity of the voltage dependenceof the base-collector capacitance Cbc, thus improving the ACLR. However,since flatness of the ft-Ic characteristics is impaired in high-outputoperation, the effect of the improvement in the ACLR is reduced.

In the case of the HBT according to the first embodiment, the ft-Iccharacteristics are substantially flat in the range of a collectorcurrent Ic of 16 mA or more and 80 mA or less (i.e., from 16 mA to 80mA). Therefore, the effect of the improvement in the ACLR is not reducedeven in high-output operation.

Next, the reason why flatness of the ft-Ic characteristics of the HBTaccording to the comparative example is impaired will be described withreference to FIG. 3B.

FIG. 3B is a graph showing simulation results of energy of an electronat the lower edge of the conduction band of an HBT when an emittervoltage is 0 V, and a base voltage and a collector voltage are 1.3 V.The horizontal axis represents a position of an HBT in a thicknessdirection in units of “μm”, and the vertical axis represents energy ofan electron at the lower edge of the conduction band in units of “eV”.The thick solid line and the thin solid line in FIG. 3B indicate energyof an electron at the lower edge of the conduction band of an HBTaccording to the first embodiment (FIG. 1) and an HBT according to thecomparative example (FIG. 2), respectively.

In the case of the comparative example, an energy barrier to theelectron at the lower edge of the conduction band is formed at theinterface between the inversely graded semiconductor layer 221 a and theupper collector layer 221. When the base voltage Vbe is increased toincrease the collector current Ic, the energy barrier to electrons thatmove from base-collector interface toward the sub-collector layer 21(FIG. 2) is relatively increased. As a result, the blocking effectbecomes significant, and the amount of electrons accumulated in theinversely graded semiconductor layer 221 a increases. Since the amountof electrons accumulated increases with an increase in the collectorcurrent Ic, the cutoff frequency ft gradually decreases with theincrease in the collector current Ic.

In the case of the first embodiment, the collector layer 22 does notinclude the inversely graded semiconductor layer 221 a, and the uppercollector layer 221 (FIG. 1), which is a graded semiconductor layer, isin contact with the base layer 23. On both sides of the base-collectorinterface, the electron affinity of the base layer 23 and the electronaffinity of the collector layer 22 are equal to each other, and anenergy barrier to electrons is not formed. Furthermore, since theinversely graded semiconductor layer 221 a is not included in thecollector layer 22, an energy barrier to electrons is not formed also inthe collector layer 22. Therefore, the blocking effect does not occur.Thus, a decrease in the cutoff frequency ft in a high-current region isprevented, and the ft-Ic characteristics are substantially flat.

Next, advantageous effects of the HBT according to the first embodimentwill be described. In the HBT according to the first embodiment, aninterface between an inversely graded semiconductor layer and a gradedsemiconductor layer is not present in the collector layer 22. Therefore,it is not necessary to dispose a delta-doped layer for decreasing anenergy barrier formed at the interface between the inversely gradedsemiconductor layer and the graded semiconductor layer. Since ahigh-concentration layer such as a delta-doped layer is not disposed inthe vicinity of the base-collector interface, the linearity of thevoltage dependence of the base-collector capacitance Cbc can be ensured.As a result, an improvement in the ACLR can be realized.

Furthermore, since the blocking effect does not occur in the HBTaccording to the first embodiment, flatness of the ft-Ic characteristicscan be ensured. As a result, a reduction in the effect of improving theACLR can be prevented.

In the first embodiment, an improvement in the ACLR can be realized, anda reduction in the effect of improving the ACLR can be prevented. Thus,the ACLR can be improved in high-output operation. In the case where theACLR is fixed, the efficiency of the HBT can be improved.

Second Embodiment

Next, an HBT according to a second embodiment will be described withreference to FIGS. 4 to 8. Hereinafter, descriptions of configurationsthat are common to those of the HBT (FIG. 1) according to the firstembodiment will be omitted.

FIG. 4 is a sectional view of an HBT according to the second embodiment.A sub-collector layer 21 is made of n-type GaAs having a Siconcentration of 2×10¹⁸ cm⁻³ or more and 6×10¹⁸ cm⁻³ or less (i.e., from2×10¹⁸ cm⁻³ to 6×10¹⁸ cm⁻³) and has a thickness of 0.3 μm or more and1.0 μm or less (i.e., from 0.3 μm to 1.0 μm).

A collector layer 22 includes four layers, e.g., a first collector layer224, a second collector layer 225, a third collector layer 226, and afourth collector layer 227 that are stacked in this order from thesub-collector layer 21 toward a base layer 23. The thickness, thematerial, and the doping concentration of each of the first collectorlayer 224 to the fourth collector layer 227 will be described later withreference to FIG. 5.

The base layer 23 is made of, for example, p-type Al_(x)Ga_(1-x)Ashaving a C concentration of 2×10¹⁹ cm⁻³ or more and 5×10¹⁹ cm⁻³ or less(i.e., from 2×10¹⁹ cm⁻³ to 5×10¹⁹ cm⁻³) and an AlAs mixed-crystal ratiox of 0.05. The base layer 23 has a thickness of, for example, 50 nm ormore and 150 nm or less (i.e., from 50 nm to 150 nm).

An emitter layer 24 is disposed on the entire region of the base layer23. The emitter layer 24 is made of, for example, n-type In_(x)Ga_(1-x)Phaving a Si concentration of 2×10¹⁷ cm⁻³ or more and 5×10¹⁷ cm⁻³ or less(i.e., from 2×10¹⁷ cm⁻³ to 5×10¹⁷ cm⁻³) and an InP mixed-crystal ratio xof 0.5.

An emitter cap layer 25 made of, for example, n-type GaAs having a Siconcentration of 2×10¹⁸ cm⁻³ or more and 4×10¹⁸ cm⁻³ or less (i.e.,2×10¹⁸ cm⁻³ to 4×10¹⁸ cm⁻³) is disposed on a partial region of theemitter layer 24. The emitter cap layer 25 has a thickness of, forexample, 50 nm or more and 150 nm or less (i.e., from 50 nm to 150 nm).

An emitter contact layer 26 made of, for example, n-typeIn_(x)Ga_(1-x)As having a Si concentration of 1×10¹⁹ cm⁻³ or more and3×10¹⁹ cm⁻³ or less (i.e., from 1×10¹⁹ cm⁻³ to 3×10¹⁹ cm⁻³) is disposedon the emitter cap layer 25. The emitter contact layer 26 includes twolayers of a lower emitter contact layer 260 and an upper emitter contactlayer 261 disposed on the lower emitter contact layer 260. An InAsmixed-crystal ratio x of the lower emitter contact layer 260 linearlychanges, for example, from 0 at the interface closer to the base layer23 to 0.5 at the interface farther from the base layer 23. The InAsmixed-crystal ratio x of the upper emitter contact layer 261 is, forexample, 0.5. The lower emitter contact layer 260 and the upper emittercontact layer 261 each have a thickness of, for example, 30 nm or moreand 70 nm or less (i.e., from 30 nm to 70 nm).

The thickness and the doping concentration of the emitter layer 24 areset such that the emitter layer 24 in a region where the emitter caplayer 25 is not disposed in plan view is depleted. A collector electrode31 is disposed on the sub-collector layer 21. The interface between thecollector electrode 31 and the sub-collector layer 21 is alloyed, andthe collector electrode 31 is thereby in ohmic contact with thesub-collector layer 21. The collector electrode 31 has, for example, amultilayer structure in which a AuGe film having a thickness of 60 nm, aNi film having a thickness of 10 nm, a Au film having a thickness of 200nm, a Mo film having a thickness of 10 nm, and a Au film having athickness of 1 μm are stacked.

A base electrode 32 is disposed on the base layer 23 in an openingprovided in the emitter layer 24. The interface between the baseelectrode 32 and the base layer 23 is alloyed, and the base electrode 32is thereby in ohmic contact with the base layer 23. The base electrode32 has, for example, a multilayer structure in which a Ti film having athickness of 50 nm, a Pt film having a thickness of 50 nm, and a Au filmhaving a thickness of 200 nm are stacked.

An emitter electrode 33 is disposed on the emitter contact layer 26 andis in ohmic contact with the emitter layer 24 with the emitter contactlayer 26 and the emitter cap layer 25 therebetween. The emitterelectrode 33 has, for example, a multilayer structure in which a Ti filmhaving a thickness of 50 nm, a Pt film having a thickness of 50 nm, anda Au film having a thickness of 200 nm are stacked.

The semiconductor layers including the sub-collector layer 21 to theemitter contact layer 26, the collector electrode 31, the base electrode32, and the emitter electrode 33 are covered with a protective film 35.The protective film 35 is made of, for example, SiN. Metal wiring linesare formed on the protective film 35.

FIG. 5 is a graph showing a distribution of an AlAs mixed-crystal ratiox and a distribution of a doping concentration with respect to athickness direction of the collector layer 22. The first collector layer224, the second collector layer 225, the third collector layer 226, andthe fourth collector layer 227 have thicknesses of, for example, 500 nm,200 nm, 220 nm, and 400 nm, respectively.

The first collector layer 224 to the third collector layer 226 are eachmade of n-type GaAs. The fourth collector layer 227 is made of n-typeAl_(x)Ga_(1-x)As. The fourth collector layer 227 is a gradedsemiconductor layer in which the AlAs mixed-crystal ratio x linearlychanges from 0.05 at the interface closer to the base layer 23 to 0 atthe interface closer to the sub-collector layer 21.

The base layer 23 is made of p-type Al_(x)Ga_(1-x)As. The AlAsmixed-crystal ratio x of the base layer 23 is equal to the AlAsmixed-crystal ratio x of the fourth collector layer 227 at the interfaceon the base side. Therefore, at the base-collector interface, theelectron affinity of the base layer 23 is equal to the electron affinityof the collector layer 22 at the interface on the base side.

The first collector layer 224, the second collector layer 225, the thirdcollector layer 226, and the fourth collector layer 227 have Siconcentrations of, for example, 3×10¹⁸ cm⁻³, 5×10¹⁶ cm⁻³, 1.5×10¹⁶ cm⁻³,and 3×10¹⁵ cm⁻³, respectively. Thus, the collector layer 22 includes afirst portion formed of the fourth collector layer 227, which has thelowest concentration, and a second portion formed of the first collectorlayer 224, the second collector layer 225, and the third collector layer226, all of which have higher concentration than the first collectorlayer 224. Furthermore, the second portion includes a third portionformed of the second collector layer 225 and the third collector layer226, which have relatively low concentrations, and a fourth portionformed of the first collector layer 224, which has the higherconcentration.

Next, a method for producing an HBT according to the second embodimentwill be described with reference to FIGS. 6 to 8. FIGS. 6, 7, and 8 aresectional views of an HBT during its production.

As illustrated in FIG. 6, semiconductor layers including a sub-collectorlayer 21 to an emitter contact layer 26 are epitaxially grown on asubstrate 20 made of semi-insulating GaAs. This growth can be conductedby, for example, metalorganic chemical vapor deposition (MOCVD) or thelike.

As illustrated in FIG. 7, an emitter electrode 33 is formed on a partialregion of the emitter contact layer 26. The emitter electrode 33 can beformed by, for example, vacuum evaporation and a lift-off method.

After the formation of the emitter electrode 33, unnecessary portions ofthe emitter contact layer 26 and the emitter cap layer 25 are removed byetching using a photoresist film (not shown) having a predeterminedpattern as an etching mask. In this etching, it is preferable to use anetchant capable of selectively etching the emitter contact layer 26 madeof InGaAs and the emitter cap layer 25 made of GaAs relative to theemitter layer 24 made of InGaP. After the etching, the photoresist filmused as the etching mask is removed. As a result of the above-describedsteps, a mesa structure including the emitter cap layer 25 and theemitter contact layer 26 is formed.

As illustrated in FIG. 8, unnecessary portions of the emitter layer 24,the base layer 23, and the collector layer 22 are removed by etchingusing a photoresist film (not shown) having a predetermined pattern asan etching mask. As a result, a mesa structure including the collectorlayer 22, the base layer 23, and the emitter layer 24 is formed. Thesub-collector layer 21 is exposed around the mesa structure. The stop ofthis etching is performed by controlling the time. After the etching,the photoresist film used as the etching mask is removed.

The emitter layer 24 is etched by using, as an etching mask, aphotoresist film (not shown) having an opening in a region where a baseelectrode 32 is to be formed to form an opening. The base layer 23 isexposed in the opening. The base electrode 32 is formed on the baselayer 23 in the opening. Base electrode materials are deposited also onthe photoresist film. The base electrode 32 can be formed by vacuumevaporation. The photoresist film is removed (lifted off) together withthe base electrode materials deposited thereon. Subsequently, analloying treatment is performed, so that the base electrode 32 isbrought into ohmic contact with the base layer 23.

As illustrated in FIG. 4, a collector electrode 31 is formed on thesub-collector layer 21. The collector electrode 31 can be formed byvacuum evaporation and a lift-off method. Subsequently, an alloyingtreatment is performed, so that the collector electrode 31 is broughtinto ohmic contact with the sub-collector layer 21. After the alloyingtreatment, a protective film 35 made of SiN is formed.

Next, advantageous effects of the HBT according to the second embodimentwill be described.

In the second embodiment, the collector layer 22 includes no inverselygraded semiconductor layer, and the electron affinity of the fourthcollector layer 227, which is a graded semiconductor layer, at theinterface on the base side is equal to the electron affinity of the baselayer 23, as in the first embodiment. Therefore, an energy barrier toelectrons is not formed in the collector layer 22. As a result, theblocking effect does not occur, and thus the ft-Ic characteristics areflat. Furthermore, since a high-concentration layer such as adelta-doped layer is not disposed in the collector layer 22 near thebase layer 23, the linearity of the voltage dependence of thebase-collector capacitance Cbc can be ensured.

Due to the two factors described above, the ACLR in high-outputoperation and radio-frequency characteristics can be improved in ahigh-frequency power amplifier including the HBT according to the secondembodiment. In the case where the ACLR is fixed, the efficiency of thepower amplifier can be enhanced.

Next, the effect of the distribution of the doping concentration of thecollector layer 22 shown in FIG. 5 will be described. In the secondembodiment, the doping concentration of the fourth collector layer 227is 3×10¹⁵ cm⁻³, which is sufficiently lower than an ordinary dopingconcentration. Furthermore, the doping concentration of the fourthcollector layer 227 is about four orders of magnitude lower than thedoping concentration of the base layer 23. Therefore, when a collectorvoltage Vce is increased, a depletion layer between the base and thecollector rapidly extends toward the inside of the collector layer 22.At the time when the collector voltage Vce reaches a collectorsaturation voltage in a saturation operation region of the HBT, thedepletion layer substantially reaches the interface between the thirdcollector layer 226 and the fourth collector layer 227.

Furthermore, in the second embodiment, the doping concentration of thethird collector layer 226 is five times the doping concentration of thefourth collector layer 227. When the depletion layer reaches theinterface between the third collector layer 226 and the fourth collectorlayer 227, further extension of the depletion layer is suppressedbecause the doping concentration of the third collector layer 226 issufficiently higher than the doping concentration of the fourthcollector layer 227. Therefore, even when the collector voltage Vce isincreased in a region in which the collector voltage Vce is higher thanthe collector saturation voltage (active operation region), extension ofthe depletion layer is suppressed. As a result, the linearity of thevoltage dependence of the base-collector capacitance Cbc is improved.

In order to obtain a sufficient effect of improving the linearity of thevoltage dependence of the base-collector capacitance Cbc, the dopingconcentration of the fourth collector layer 227 is preferably 3×10^(1s)cm⁻³ or less. The fourth collector layer 227 may be made of p-typeAlGaAs having a doping concentration of 1×10¹⁵ cm⁻³ or less, or undopedAlGaAs. In general, the fourth collector layer 227 is preferably made ofat least one semiconductor selected from the group consisting of n-typesemiconductors having a doping concentration of 3×10¹⁵ cm⁻³ or less,p-type semiconductors having a doping concentration of 1×10¹⁵ cm⁻³ orless, and intrinsic semiconductors. Furthermore, the dopingconcentrations of the third collector layer 226 and the second collectorlayer 225 are each preferably 1×10¹⁶ cm⁻³ or more and 7×10¹⁶ cm⁻³ orless (i.e., from 1×10¹⁶ cm⁻³ to 7×10¹⁶ cm⁻³). The doping concentrationof the second collector layer 225 is preferably equal to or higher thanthe doping concentration of the third collector layer 226 within thisdoping concentration range.

Furthermore, in the second embodiment, the fourth collector layer 227,which has the lowest concentration, is formed of a graded semiconductorlayer. In the case of such a configuration in which the fourth collectorlayer 227 which is a graded semiconductor layer is included in alow-concentration region, a more significant effect of improving thelinearity of the voltage dependence of the base-collector capacitanceCbc is obtained.

When a low-concentration region is present on the side closer to thebase layer 23, the electric field in the low-concentration region isweakened by the Kirk effect, and thus there is a concern about adecrease in the electron velocity. The decrease in the electron velocitymay cause a decrease in the cutoff frequency ft. In the secondembodiment, since the fourth collector layer 227 having a lowconcentration is formed of a graded semiconductor layer, an effectiveelectric field is generated in the fourth collector layer 227. Electronsare drifted by this effective electric field, and thus the decrease inthe cutoff frequency ft due to the Kirk effect can be compensated. Thus,when the fourth collector layer 227 having a low concentration is formedof a graded semiconductor layer, the effects of improvingradio-frequency characteristics of a power amplifier and improving theACLR are enhanced.

In the second embodiment, the doping concentrations of the secondcollector layer 225, the third collector layer 226, and the fourthcollector layer 227 are 1/10 or less of the doping concentration of thefirst collector layer 224 and the doping concentration of thesub-collector layer 21. This configuration can enhance thebase-collector breakdown voltage and the emitter-collector breakdownvoltage. To increase the breakdown voltage, the second collector layer225 preferably has a thickness of 100 nm or more and 300 nm or less(i.e., from 100 nm to 300 nm) and a doping concentration of 3×10¹⁶ cm⁻³or more and 7×10¹⁶ cm⁻³ or less (i.e., from 3×10¹⁶ cm⁻³ to 7×10¹⁶ cm⁻³).Furthermore, the third collector layer 226 preferably has a thickness of100 nm or more and 300 nm or less (i.e., from 100 nm to 300 nm) and adoping concentration of 1×10¹⁶ cm⁻³ or more and 4×10¹⁶ cm⁻³ or less(i.e., from 1×10¹⁶ cm⁻³ to 4×10¹⁶ cm⁻³). Furthermore, the fourthcollector layer 227 preferably has a thickness of 300 nm or more and 500nm or less (i.e., from 300 nm to 500 nm) and a doping concentration of3×10¹⁵ cm⁻³ or less.

The first collector layer 224 forms, together with the sub-collectorlayer 21, a parallel resistance that causes the collector current Ic toflow in the in-plane direction. In order to reduce the collectorresistance of the HBT, the doping concentration of the first collectorlayer 224 is preferably substantially the same as the dopingconcentration of the sub-collector layer 21, for example, 0.5 times ormore and 1.5 times or less (i.e., from 0.5 time to 1.5 times) the dopingconcentration of the sub-collector layer 21. For example, the dopingconcentration of the first collector layer 224 is preferably in a rangeof 1×10¹⁸ cm⁻³ or more and 5×10¹⁸ cm⁻³ or less (i.e., from 1×10¹⁸ cm⁻³to 5×10¹⁸ cm⁻³). Preferably, the thickness of the first collector layer224 is substantially the same as the thickness of the sub-collectorlayer 21. The reduction in the collector resistance enables higheroutput and an improvement in the efficiency of a power amplifier to berealized.

Modification of Second Embodiment

Next, modifications of the second embodiment will be described.

In the second embodiment, the AlAs mixed-crystal ratio x of the baselayer 23 (FIG. 4) made of p-type Al_(x)Ga_(1-x)As is uniform withrespect to the thickness direction. Alternatively, the AlAsmixed-crystal ratio x of the base layer 23 may be changed in thethickness direction. In such a case, the electron affinity is preferablygradually increased from the emitter layer 24 toward the collector layer22. Preferably, for example, the AlAs mixed-crystal ratio x of the baselayer 23 is linearly changed from 0.07 on the emitter layer 24 side to0.05 on the collector layer 22 side. When the electron affinity has sucha distribution, electrons can be drifted in the base layer 23.Consequently, the cutoff frequency ft can be improved.

In the second embodiment, the interface between a graded semiconductorlayer made of AlGaAs and a uniform composition layer made of GaAscoincides with the interface at which the doping concentrationdiscontinuously changes (the interface between the third collector layer226 and the fourth collector layer 227). However, these two interfacesneed not coincide with each other.

FIG. 9 is a graph showing a distribution of an AlAs mixed-crystal ratiox and a distribution of a doping concentration in a collector layer 22of an HBT according to a modification of the second embodiment. As shownby dashed line DL1 in FIG. 9, the interface between the gradedsemiconductor layer (AlGaAs layer) and the GaAs layer (the position atwhich the AlAs mixed-crystal ratio x becomes 0) may be disposed in alow-concentration region (the fourth collector layer 227) which isdepleted during active operation of the HBT. In this case, the regionwhich is depleted during active operation of the HBT extends through theinterface between the graded semiconductor layer and the GaAs layer tothe GaAs layer. On the other hand, as shown by dashed line DL2 in FIG.9, the interface between the graded semiconductor layer and the GaAslayer may be disposed in the third collector layer 226. In this case,the region which is depleted during active operation of the HBT remainsin the graded semiconductor layer, and a non-depleted region is partlyleft in the graded semiconductor layer.

As in the modifications shown by dashed lines DL1 and DL2 in FIG. 9, thedrift velocity of electrons can be maximized by independently selectingthe thickness of the graded semiconductor layer without limitation ofthe thickness of the fourth collector layer 227. In addition, the driftvelocity of electrons can be maximized by optimizing not only thethickness of the graded semiconductor layer but also the AlAsmixed-crystal ratio x.

In each of the configurations shown by dashed lines DL1 and DL2 in FIG.9, an energy barrier to electrons is not formed at the interface betweenthe graded semiconductor layer and the GaAs layer.

In the second embodiment, Si is used as a dopant of the emitter contactlayer 26. In order to achieve a higher concentration, at least one of Seand Te may be used as the n-type dopant. In the second embodiment,although the emitter layer 24, the base layer 23, and a portion of thecollector layer 22 on the base layer 23 side are made of InGaP, AlGaAs,and AlGaAs, respectively, they may be made of other compoundsemiconductors. Examples of combinations of compound semiconductors ofthe emitter layer 24, the base layer 23, and a portion of the collectorlayer 22 on the base layer 23 side include a combination of InGaP, GaAs,and GaInAsN, a combination of AlGaAs, AlGaAs, and AlGaAs havingdifferent mixed-crystal ratios, a combination of AlGaAs, GaAs, andGaInAsN, a combination of InGaP, InGaAs, and GaInAsN, a combination ofInGaP, GaAsSb, and AlGaAs, a combination of InGaP, GaAsSb, and GaInAsN,a combination of InGaP, AlGaAs, and GaInAsN, and a combination of InGaP,GaInAsN, and GaInAsN.

The first collector layer 224 of the HBT according to the secondembodiment may be omitted, and the collector layer 22 may be constitutedby three layers of the second collector layer 225, the third collectorlayer 226, and the fourth collector layer 227. This configuration alsoprovides the effect of improving the linearity of the voltage dependenceof the base-collector capacitance Cbc and the effect of suppressing adecrease in the cutoff frequency ft.

Third Embodiment

Next, an HBT according to a third embodiment will be described withreference to FIG. 10. Hereinafter, descriptions of configurations thatare common to those of the HBT (FIG. 4, etc.) according to the secondembodiment will be omitted.

FIG. 10 is a sectional view of an HBT according to the third embodiment.In the third embodiment, an intermediate layer 27 made of a compoundsemiconductor that does not contain Al as a group III element isdisposed between a collector layer 22 and a base layer 23. Theintermediate layer 27 is made of, for example, n-type GaAs having a Siconcentration of 3×10¹⁵ cm⁻³. The intermediate layer 27 has a thicknessof, for example, 3 nm or more and 10 nm or less (i.e., from 3 nm to 10nm).

In the third embodiment, after the collector layer 22 is epitaxiallygrown, the growth temperature is decreased while the intermediate layer27 is grown. The base layer 23 is grown at a temperature lower than thegrowth temperature of the collector layer 22. The decrease in the growthtemperature of the base layer 23 enables the base layer 23 to be dopedwith a dopant at a high concentration. The increase in the dopingconcentration of the base layer 23 enables the base resistance to bedecreased. The decrease in the base resistance enables the gain of apower amplifier to be improved.

Next, advantageous effects of the HBT according to the third embodimentwill be described.

Aluminum (Al) contained in the fourth collector layer 227 has a propertyof being easily oxidized. In the third embodiment, after the growth ofthe fourth collector layer 227, the Al-free intermediate layer 27 iscontinuously grown. Accordingly, a state in which the surface of thefourth collector layer 227 is exposed is not maintained during thedecrease of the substrate temperature. Thus, oxidation of Al can besuppressed. As a result, degradation of the crystal quality at theinterface between the collector layer 22 and the base layer 23 can besuppressed.

Fourth Embodiment

Next, an HBT according to a fourth embodiment will be described withreference to FIGS. 11 and 12. Hereinafter, descriptions ofconfigurations that are common to those of the HBT (FIG. 4, etc.)according to the second embodiment will be omitted. In the fourthembodiment, the configurations of a collector layer 22 and a base layer23 are different from those of the collector layer 22 and the base layer23 in the second embodiment.

FIG. 11 is a sectional view of an HBT according to the fourthembodiment. In the fourth embodiment, the base layer 23 is made ofp-type GaAs having a C concentration of 2×10¹⁹ cm⁻³ or more and 5×10¹⁹cm⁻³ or less (i.e., from 2×10¹⁹ cm⁻³ to 5×10¹⁹ cm⁻³). The base layer 23has a thickness of 50 nm or more and 150 nm or less (i.e., from 50 nm to150 nm). In the fourth embodiment, the collector layer 22 has afive-layer structure in which a first collector layer 224, a fifthcollector layer 228, a second collector layer 225, a third collectorlayer 226, and a fourth collector layer 227 are stacked upward from asub-collector layer 21.

FIG. 12 is a graph showing a composition distribution and a dopingconcentration distribution of the collector layer 22. The firstcollector layer 224, the fifth collector layer 228, the second collectorlayer 225, the third collector layer 226, and the fourth collector layer227 have thicknesses of, for example, 500 nm, 50 nm, 200 nm, 200 nm, and400 nm, respectively. Each of the fifth collector layer 228 to thefourth collector layer 227 is formed of Ga_(1-x)In_(x)As_(1-y)N_(y), andthe first collector layer 224 is made of GaAs.

A mixed-crystal ratio x of the fourth collector layer 227 linearlychanges from 0 at the interface closer to the base layer 23 to 0.015 atthe interface closer to the sub-collector layer 21, and similarly, amixed-crystal ratio y of the fourth collector layer 227 linearly changesfrom 0 to 0.005. The mixed-crystal ratio x of the third collector layer226 linearly changes from 0.015 at the interface closer to the baselayer 23 to 0.0225 at the interface closer to the sub-collector layer21, and similarly, the mixed-crystal ratio y of the third collectorlayer 226 linearly changes from 0.005 to 0.0075. The mixed-crystal ratiox of the second collector layer 225 linearly changes from 0.0225 at theinterface closer to the base layer 23 to 0.03 at the interface closer tothe sub-collector layer 21, and similarly, the mixed-crystal ratio y ofthe second collector layer 225 linearly changes from 0.0075 to 0.01. Themixed-crystal ratio x of the fifth collector layer 228 linearly changesfrom 0.03 at the interface closer to the base layer 23 to 0 at theinterface closer to the sub-collector layer 21, and similarly, themixed-crystal ratio y of the fifth collector layer 228 linearly changesfrom 0.01 to 0. The mixed-crystal ratio x and the mixed-crystal ratio ylinearly change from the fourth collector layer 227 to the secondcollector layer 225 in this manner. These semiconductor layers arelattice-matched to a substrate 20 made of GaAs.

The fourth collector layer 227 has a doping concentration of 3×10¹⁵cm⁻³. The third collector layer 226 and the second collector layer 225each have a doping concentration of 5×10¹⁶ cm⁻³. The fifth collectorlayer 228 and the first collector layer 224 each have a dopingconcentration of 3×10¹⁸ cm⁻³.

In the fourth embodiment, the second collector layer 225, the thirdcollector layer 226, and the fourth collector layer 227 are gradedsemiconductor layers. The fifth collector layer 228 is an inverselygraded semiconductor layer.

Advantageous effects that are the same as or similar to those of thesecond embodiment are achieved also in the fourth embodiment. In thefourth embodiment, an energy barrier to electrons is formed at theinterface between the fifth collector layer 228 and the first collectorlayer 224. However, since both the fifth collector layer 228 and thefirst collector layer 224 are doped at a high concentration, theblocking effect against electron transport can be significantly reduced.Consequently, a decrease in the cutoff frequency ft in high-outputoperation can be suppressed.

Fifth Embodiment

Next, an HBT according to a fifth embodiment will be described withreference to FIGS. 13 and 14. Hereinafter, descriptions ofconfigurations that are common to those of the HBT (FIG. 4, etc.)according to the second embodiment will be omitted. In the secondembodiment, a GaAs substrate is used as the substrate 20. In the fifthembodiment, a semi-insulating InP substrate is used as a substrate 20.Semiconductor layers grown on the substrate 20 are lattice-matched toInP.

FIG. 13 is a sectional view of an HBT according to the fifth embodiment.A buffer layer 28 made of undoped InP and having a thickness of 10 nm isdisposed between the substrate 20 and a sub-collector layer 21. Thesub-collector layer 21 is made of n-type In_(0.53)Ga_(0.47)As having aSi concentration of 5×10¹⁸ cm⁻³. The sub-collector layer 21 has athickness of, for example, 500 nm.

The collector layer 22 includes four layers of a first collector layer224 to a fourth collector layer 227 as in the second embodiment. Thecomposition, the doping concentration, and the thickness of each of thelayers that form the collector layer 22 will be described later withreference to FIG. 14.

A base layer 23 is made of, for example, p-typeIn_(0.87)Ga_(0.13)As_(0.29)P_(0.71) having a concentration of a p-typedopant of 2×10¹⁹ cm³. As the p-type dopant, C, Zn, or Be is used. Thebase layer 23 has a thickness of, for example, 50 nm.

A spacer layer 29 made of undoped In_(0.87)Ga_(0.13)As_(0.29)P_(0.71) isdisposed between the base layer 23 and an emitter layer 24. The spacerlayer 29 has a thickness of, for example, 5 nm.

The emitter layer 24 is made of, for example, n-type InP having a Siconcentration of 3×10¹⁷ cm⁻³. The emitter layer 24 has a thickness of,for example, 50 nm.

An emitter contact layer 26 is disposed on the emitter layer 24. In thefifth embodiment, the emitter cap layer 25 (FIG. 4) is not provided. Theemitter contact layer 26 is made of, for example, n-typeIn_(0.53)Ga_(0.47)As having a Si concentration of 2×10¹⁹ cm⁻³. Theemitter contact layer 26 has a thickness of, for example, 100 nm.

FIG. 14 is a graph showing a composition distribution and a dopingconcentration distribution of the collector layer 22. The firstcollector layer 224, the second collector layer 225, the third collectorlayer 226, and the fourth collector layer 227 have thicknesses of, forexample, 500 nm, 200 nm, 220 nm, and 400 nm, respectively.

The first collector layer 224 is made of n-type In_(1-x)Ga_(x)As and hasa GaAs mixed-crystal ratio x of 0.47. The second collector layer 225,the third collector layer 226, and the fourth collector layer 227 areeach made of n-type In_(1-x)Ga_(x)As_(y)P_(1-y). The second collectorlayer 225 and the third collector layer 226 each have a mixed-crystalratio x of 0.28 and a mixed-crystal ratio y of 0.61. The mixed-crystalratio x of the fourth collector layer 227 linearly changes from 0.13 atthe interface closer to the base layer 23 to 0.28 at the interfacecloser to the sub-collector layer 21, and similarly, the mixed-crystalratio y of the fourth collector layer 227 linearly changes from 0.29 to0.61. The fourth collector layer 227 is a graded semiconductor layer.

The first collector layer 224 has a Si concentration of 3×10¹⁸ cm⁻³. Thesecond collector layer 225 has a Si concentration of 5×10¹⁶ cm⁻³. Thethird collector layer 226 has a Si concentration of 1.5×10¹⁶ cm⁻³. Thefourth collector layer 227 has a Si concentration of 3×10¹⁵ cm⁻³.

Advantageous effects that are the same as or similar to those of the HBTaccording to the second embodiment are achieved also in the fifthembodiment because the distribution of the electron affinity and thedistribution of the doping concentration in the collector layer 22 inthe fifth embodiment are similar to those in the second embodiment. Inorder to reduce the collector resistance, preferably, the dopingconcentration and the thickness of the first collector layer 224 aresubstantially the same as the doping concentration and the thickness ofthe sub-collector layer 21. For example, the doping concentration of thefirst collector layer 224 is preferably set to 1×10¹⁸ cm⁻³ or more and5×10¹⁸ cm⁻³ or less (i.e., from 1×10¹⁸ cm⁻³ or more and 5×10¹⁸ cm⁻³),and the thickness of the first collector layer 224 is preferably set to200 nm or more and 900 nm or less (i.e., from 200 nm to 900 nm).

In order to achieve advantageous effects that are the same as or similarto those of the second embodiment, the thickness of the second collectorlayer 225 is preferably set to 100 nm or more and 300 nm or less (i.e.,from 100 nm to 300 nm), and the doping concentration of the secondcollector layer 225 is preferably set to 3×10¹⁶ cm⁻³ or more and 7×10¹⁶cm⁻³ or less (i.e., from 3×10¹⁶ cm⁻³ to 7×10¹⁶ cm⁻³). Furthermore, thethickness of the third collector layer 226 is preferably set to 100 nmor more and 300 nm or less (i.e., from 100 nm to 300 nm), and the dopingconcentration of the third collector layer 226 is preferably set to1×10¹⁶ cm⁻³ or more and 4×10¹⁶ cm⁻³ or less (i.e., from 1×10¹⁶ cm⁻³ to4×10¹⁶ cm⁻³). Furthermore, the thickness of the fourth collector layer227 is preferably set to 300 nm or more and 500 nm or less (i.e., from300 nm to 500 nm), and the doping concentration of the fourth collectorlayer 227 is preferably set to 3×10¹⁵ cm⁻³ or less. In addition, thefourth collector layer 227 may be made of p-type InGaAsP having a p-typedopant concentration of 1×10¹⁵ cm⁻³ or less or undoped InGaAsP.

In the HBT according to the fifth embodiment, the use of InP-basedsemiconductors, which have high electron saturation velocities, enablesradio-frequency characteristics to be improved compared with the HBTaccording to the second embodiment. For example, the cutoff frequency ftcan be improved.

Modification of Fifth Embodiment

Next, HBTs according to modifications of the fifth embodiment will bedescribed.

In the fifth embodiment, the interface between the graded semiconductorlayer made of InGaAsP and the uniform composition layer made of InGaAsPcoincides with the interface at which the doping concentrationdiscontinuously changes (the interface between the third collector layer226 and the fourth collector layer 227). However, these two interfacesneed not coincide with each other. As shown by dashed lines DL1 in FIG.14, the interface between the graded semiconductor layer and the uniformcomposition layer may be disposed inside the fourth collector layer 227.Alternatively, as shown by dashed lines DL2, the interface between thegraded semiconductor layer and the uniform composition layer may bedisposed inside the third collector layer 226.

The embodiments described above are exemplary, and, needless to say, apartial replacement or combination of configurations described indifferent embodiments is possible. The same or similar advantageouseffects achieved by the same or similar configurations in a plurality ofembodiments will not be mentioned in each of the embodiments.Furthermore, the present disclosure is not limited to the embodimentsdescribed above. For example, it is obvious for those skilled in the artthat various modifications, improvements, combinations, and the like canbe made.

While preferred embodiments of the disclosure have been described above,it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the disclosure. The scope of the disclosure, therefore, isto be determined solely by the following claims.

What is claimed is:
 1. A heterojunction bipolar transistor comprising: a collector layer, a base layer, and an emitter layer that are stacked on a substrate, wherein the collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer, and an electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.
 2. The heterojunction bipolar transistor according to claim 1, wherein an electron affinity of the base layer increases from an interface closer to the emitter layer toward the interface closer to the collector layer.
 3. The heterojunction bipolar transistor according to claim 2, wherein the base layer is made of AlGaAs, and an AlAs mixed-crystal ratio of the base layer decreases from the interface closer to the emitter layer toward the interface closer to the collector layer.
 4. The heterojunction bipolar transistor according to claim 1, wherein the collector layer includes a first portion which is a portion closer to the base layer and a second portion which is a remaining portion farther from the base layer, and a doping concentration of the first portion is lower than a doping concentration of the second portion.
 5. The heterojunction bipolar transistor according to claim 4, wherein the first portion is made of at least one semiconductor selected from the group consisting of n-type semiconductors having a doping concentration of 3×10¹⁵ cm⁻³ or less, p-type semiconductors having a doping concentration of 1×10¹⁵ cm⁻³ or less, and intrinsic semiconductors.
 6. The heterojunction bipolar transistor according to claim 4, wherein the second portion includes a third portion which is a portion closer to the first portion and a fourth portion which is a remaining portion farther from the first portion, and a doping concentration of the third portion is lower than a doping concentration of the fourth portion.
 7. The heterojunction bipolar transistor according to claim 6, further comprising: a sub-collector layer made of an n-type semiconductor, disposed on the substrate, and functioning as a path through which a current flows into the collector layer, wherein the collector layer is disposed on the sub-collector layer, and each of the doping concentrations of the first portion and the third portion is 1/10 or less of a doping concentration of the sub-collector layer.
 8. The heterojunction bipolar transistor according to claim 7, wherein the doping concentration of the fourth portion is from 0.5 times to 1.5 times the doping concentration of the sub-collector layer.
 9. The heterojunction bipolar transistor according to claim 2, wherein the collector layer includes a first portion which is a portion closer to the base layer and a second portion which is a remaining portion farther from the base layer, and a doping concentration of the first portion is lower than a doping concentration of the second portion.
 10. The heterojunction bipolar transistor according to claim 3, wherein the collector layer includes a first portion which is a portion closer to the base layer and a second portion which is a remaining portion farther from the base layer, and a doping concentration of the first portion is lower than a doping concentration of the second portion.
 11. The heterojunction bipolar transistor according to claim 9, wherein the first portion is made of at least one semiconductor selected from the group consisting of n-type semiconductors having a doping concentration of 3×10¹⁵ cm⁻³ or less, p-type semiconductors having a doping concentration of 1×10¹⁵ cm⁻³ or less, and intrinsic semiconductors.
 12. The heterojunction bipolar transistor according to claim 10, wherein the first portion is made of at least one semiconductor selected from the group consisting of n-type semiconductors having a doping concentration of 3×10¹⁵ cm⁻³ or less, p-type semiconductors having a doping concentration of 1×10¹⁵ cm⁻³ or less, and intrinsic semiconductors.
 13. The heterojunction bipolar transistor according to claim 5, wherein the second portion includes a third portion which is a portion closer to the first portion and a fourth portion which is a remaining portion farther from the first portion, and a doping concentration of the third portion is lower than a doping concentration of the fourth portion.
 14. The heterojunction bipolar transistor according to claim 9, wherein the second portion includes a third portion which is a portion closer to the first portion and a fourth portion which is a remaining portion farther from the first portion, and a doping concentration of the third portion is lower than a doping concentration of the fourth portion.
 15. The heterojunction bipolar transistor according to claim 10, wherein the second portion includes a third portion which is a portion closer to the first portion and a fourth portion which is a remaining portion farther from the first portion, and a doping concentration of the third portion is lower than a doping concentration of the fourth portion.
 16. The heterojunction bipolar transistor according to claim 11, wherein the second portion includes a third portion which is a portion closer to the first portion and a fourth portion which is a remaining portion farther from the first portion, and a doping concentration of the third portion is lower than a doping concentration of the fourth portion.
 17. The heterojunction bipolar transistor according to claim 12, wherein the second portion includes a third portion which is a portion closer to the first portion and a fourth portion which is a remaining portion farther from the first portion, and a doping concentration of the third portion is lower than a doping concentration of the fourth portion.
 18. The heterojunction bipolar transistor according to claim 13, further comprising: a sub-collector layer made of an n-type semiconductor, disposed on the substrate, and functioning as a path through which a current flows into the collector layer, wherein the collector layer is disposed on the sub-collector layer, and each of the doping concentrations of the first portion and the third portion is 1/10 or less of a doping concentration of the sub-collector layer.
 19. The heterojunction bipolar transistor according to claim 14, further comprising: a sub-collector layer made of an n-type semiconductor, disposed on the substrate, and functioning as a path through which a current flows into the collector layer, wherein the collector layer is disposed on the sub-collector layer, and each of the doping concentrations of the first portion and the third portion is 1/10 or less of a doping concentration of the sub-collector layer.
 20. The heterojunction bipolar transistor according to claim 15, further comprising: a sub-collector layer made of an n-type semiconductor, disposed on the substrate, and functioning as a path through which a current flows into the collector layer, wherein the collector layer is disposed on the sub-collector layer, and each of the doping concentrations of the first portion and the third portion is 1/10 or less of a doping concentration of the sub-collector layer. 